Konu "DLTS" için Elektrik-Elektronik Mühendisliği Bölümü listeleme

Toplam kayıt 3, listelenen: 1-3

Deep level transient spectroscopy and pulse height measurements on high resolution n-type 4H-SiC epitaxial schottky barrier radiation detectors

Oner, Cihan; Chowdhury, Towhid A.; Santi, Enrico; Mandal, Krishna C. (IEEE, 2017)

High resolution 20 μm n-type 4H-SiC epitaxial layer Schottky barrier radiation detectors were fabricated by depositing nickel (Ni) contacts using DC sputtering for both front- and backside. Current-Voltage (I-V) measurements ...
High resolution radiation detectors based on 4H-SiC N-type epitaxial layers and pixilated CDZNTE single crystal devices

Öner, Cihan (University of South Carolina Scholar Commons, 2018)

Silicon Carbide (SiC) is an indirect wide bandgap semiconductor with high thermal conductivity, high breakdown electric field, high carrier saturation drift velocity, and large displacement energy making it a suitable ...
High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)

Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mohammad, A. Mannan; Mandal, Krishna C. (SPIE, 2015)

High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 ...

Toplam kayıt 3, listelenen: 1-3

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