Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mohammad, A. Mannan; Mandal, Krishna C.
(SPIE, 2015)
High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 ...