Large volume single crystals of Cd 0.9 Zn 0.1 Te (CZT) have been grown by vertical Bridgman technique using in-house zone refined precursor materials (Cd, Zn, and Te). The grown semi-insulating CZT crystals have shown high ...

High resolution 20 μm n-type 4H-SiC epitaxial layer Schottky barrier radiation detectors were fabricated by depositing nickel (Ni) contacts using DC sputtering for both front- and backside. Current-Voltage (I-V) measurements ...

Semi-insulating Cd0.9Zn0.1Te nuclear detector grade crystals were grown by a low temperature solution method from in-house zone refined (~7N) precursor materials. The processed crystals from the grown ingot were thoroughly ...

Silicon Carbide (SiC) is an indirect wide bandgap semiconductor with high thermal conductivity, high breakdown electric field, high carrier saturation drift velocity, and large displacement energy making it a suitable ...

We report the development of an edge termination by depositing thin Si3N4 passivating film on 4H-SiC epilayer based radiation detector. The edge termination method is shown to be very effective for improving both the ...

Amorphous selenium (a-Se) alloy materials doped with lithium (Li), boron (B), arsenic (As), and chlorine (Cl), were synthesized for room temperature radiation detection applications using an optimized alloy composition for ...

Schottky barrier radiation detectors were fabricated on the Si-face of 50 μm thick detector grade n-type 4H-SiC epitaxial layers. The junction properties of the fabricated detectors were investigated by current-voltage ...