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Deep level transient spectroscopy and pulse height measurements on high resolution n-type 4H-SiC epitaxial schottky barrier radiation detectors

Oner, Cihan; Chowdhury, Towhid A.; Santi, Enrico; Mandal, Krishna C. (IEEE, 2017)

High resolution 20 μm n-type 4H-SiC epitaxial layer Schottky barrier radiation detectors were fabricated by depositing nickel (Ni) contacts using DC sputtering for both front- and backside. Current-Voltage (I-V) measurements ...
High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)

Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mohammad, A. Mannan; Mandal, Krishna C. (SPIE, 2015)

High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 ...

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