Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Zhao, Feng; Mandal, Krishna C.
(IEEE, 2015)
Schottky barrier radiation detectors were fabricated on 12 μm n-type 4H-SiC epitaxial layers grown on a 4° off-axis highly doped 4H-SiC substrate (0001). Schottky barrier junction properties were characterized through ...