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Deep levels in n-type 4H-silicon carbide epitaxial layers investigated by deep-level transient spectroscopy and isochronal annealing studies

Mohammad, A. Mannan; Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mandal, Krishna C. (IEEE, 2016)

Deep levels were investigated by the capacitance mode deep-level transient spectroscopy (C-DLTS) on 4H-SiC Schottky barrier diodes fabricated on 50 μm-thick n-type 4HSiC epitaxial layers. C-DLTS scans from 80 K to 800 K ...
Defect characterization of Cd0.9Zn0.1Te crystals using electron beam induced current (EBIC) imaging and thermally stimulated current (TSC) measurements

Pak, Rahmi O.; Nguyen, Khai V.; Oner, Cihan; Mohammad, A. Mannan; Mandal, Krishna C. (SPIE, 2015)

Semi-insulating Cd0.9Zn0.1Te nuclear detector grade crystals were grown by a low temperature solution method from in-house zone refined (~7N) precursor materials. The processed crystals from the grown ingot were thoroughly ...
High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)

Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mohammad, A. Mannan; Mandal, Krishna C. (SPIE, 2015)

High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 ...
Investigation of thermally evaporated high resistive B-doped amorphous selenium alloy films and metal contact studies

Oner, Cihan; Nguyen, Khai V.; Pak, Rahmi O.; Mohammad, A. Mannan; Mandal, Krishna C. (SPIE, 2015)

Amorphous selenium (a-Se) alloy materials with arsenic, chlorine, boron, and lithium doping were synthesized for room temperature nuclear radiation detector applications using an optimized alloy composition for enhanced ...
Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer

Mohammad, A. Mannan; Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan (SPIE, 2015)

Schottky barrier radiation detectors were fabricated on the Si-face of 50 μm thick detector grade n-type 4H-SiC epitaxial layers. The junction properties of the fabricated detectors were investigated by current-voltage ...