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Yazar "Chowdhury, Towhid A." için listeleme

Toplam kayıt 7, listelenen: 1-7

Characterization of Cd0.9Zn0.1Te single crystals for radiation detectors

Pak, Rahmi O.; Nguyen, Khai V.; Oner, Cihan; Chowdhury, Towhid A.; Mandal, Krishna C. (IEEE, 2015)

Large volume single crystals of Cd 0.9 Zn 0.1 Te (CZT) have been grown by vertical Bridgman technique using in-house zone refined precursor materials (Cd, Zn, and Te). The grown semi-insulating CZT crystals have shown high ...
Crystal growth and characterization of Cd0.9Zn 0.1Te for gamma-ray detectors: thermally stimulated current (TSC), electron beam induced current (EBIC), and pulse height spectroscopy (PHS)

Oner, Cihan; Chowdhury, Towhid A.; Mandal, Krishna C. (IEEE, 2017)

Cd0.9Zn0.1Te (CZT) detector grade crystals were grown from in-house zone refined Cd, Zn, and Te (7N) precursor materials, using a low temperature tellurium solvent growth method. These crystals were grown using a high ...
Deep level transient spectroscopy and pulse height measurements on high resolution n-type 4H-SiC epitaxial schottky barrier radiation detectors

Oner, Cihan; Chowdhury, Towhid A.; Santi, Enrico; Mandal, Krishna C. (IEEE, 2017)

High resolution 20 μm n-type 4H-SiC epitaxial layer Schottky barrier radiation detectors were fabricated by depositing nickel (Ni) contacts using DC sputtering for both front- and backside. Current-Voltage (I-V) measurements ...
Design and response testing of Boron-Diffused silicon carbide neutron detectors for Dosimetry and Monitoring applications

Mandal, Krishna C.; Chowdhury, Towhid A.; Oner, Cihan; Ruddy, Frank H. (ASTM INTERNATIONAL, 2018-12-14)

A high-sensitivity boron-diffused silicon carbide (4H-SiC) p-n diode has been designed and fabricated using vapor-phase epitaxy. Boron-10 (10B) is diffused into nitrogen-doped n- SiC, forming the p+ layer, and thermal ...
Improved radiation detectors on 4H-SiC epilayers by edge termination

Oner, Cihan; Chowdhury, Towhid A.; Pak, Rahmi O.; Mandal, Krishna C. (SPIE, 2016)

We report the development of an edge termination by depositing thin Si3N4 passivating film on 4H-SiC epilayer based radiation detector. The edge termination method is shown to be very effective for improving both the ...
Investigation of metal contacts on high-resistivity large-area amorphous selenium alloy films

Oner, Cihan; Nguyen, Khai V.; Pak, Rahmi O.; Chowdhury, Towhid A.; Mandal, Krishna C. (IEEE, 2015)

Amorphous selenium (a-Se) alloy materials doped with lithium (Li), boron (B), arsenic (As), and chlorine (Cl), were synthesized for room temperature radiation detection applications using an optimized alloy composition for ...
Synthesis and characterization of amorphous selenium alloys radiation detectors

Chowdhury, Towhid A.; Oner, Cihan; Mandal, Krishna C. (IEEE, 2017)

Synthesized amorphous selenium (a-Se) alloy materials have been characterized for room temperature high-energy nuclear radiation detectors and x-ray detection applications. The alloy composition has been optimized to ensure ...