• Mimarlık ve planlama perspektifinden kıyı alanlarında kamusallık: Türkiye'deki hukuki yaklaşımların incelenmesi 

  Aköz Çevrimli, Begüm (Yaz Yayınları, 2024-10-22)
• Konut ve çevresinde fiziksel erişilebilirliğin değerlendirilmesi: Isparta akkent TOKİ toplu konutları örneği 

  Aköz Çevrimli, Begüm; Çevrimli, Süleyman Cevat; Ulusoy, Mine (Hasan Kalyoncu Üniversitesi, 2024-02)

  Konut ve çevresi, insan yaşamının sürdürülebilmesi için fiziksel, psikolojik ve sosyo-kültürel ihtiyaçların karşılandığı, kişilerin yaşam kalitesini etkileyen önemli mekanlardır. Çalışmanın konusunu oluşturan toplu konut ...
• Syntactic legibility of İmage Elements: Eskişehir case 

  Topçu, Mehmet; Aköz Çevrimli, Begüm; Geyikli, Hande Büşra (Yildiz Tecnical University, 2021)

  This study aims to measure the image perception and spatial legibility of Eskisehir city and to discuss the relationship between image elements and spatial legibility through comparative analysis. Methodologically, the ...
• The role of architecture documentaries in the adoption of contemporary design approaches in mosque architecture: A research on architecture students 

  Aköz Çevrimli, Begüm; Tazefidan, Ceyhan; Geyikli, Hande Büşra (Konya technical university, 2024-06-30)

  In the historical process, mosques have exhibited different architectural features depending on various factors such as culture, geography and construction techniques, and have generally been defined by elements such as ...
• Mağara içerisinde çekilen düşük ışıklı fotoğrafların iyileştirilmesinde retineks yönteminin kullanılması 

  Yazlık, Bilgin (7th INTERNATIONAL UBSDER SCIENTIFIC RESEARCH CONGRESS, 2024-03-11)

  Mağaralar çoğunlukla doğal yapıları gereği ya tamamen karanlık ya da çok az doğal ışık alabilen kapalı alanlardır. Mağaracılar, mağara içerisinde çok zor koşullarda ve dar alanlarda çalışmak zorunda kalmaktadırlar. Bu ...
• Asidik pomza agregasının geçirimli beton üretiminde kullanılabilirliğinin araştırılması 

  Çelikten, Serhat; Baran, Bilal (Nevşehir Hacı Bektaş Veli Üniversitesi, 2023-09-07)

  Geçirimli betonlar ekolojik dengenin korunması amacıyla ortaya çıkmış yenilikçi malzemelerdir. Pomzanın geçirimli betonlarda kullanımı ile ilgili çalışmalar son derece kısıtlıdır. Bu çalışmada asidik pomza agregasının ...
• Comparison of masonry building constructed from different wall materials according to 2007 and 2018 Turkish Earthquake Codes 

  Baran, Bilal; Bozdoğan, Kanat Burak; Atabey, İsmail İsa (Süleyman Demirel University Faculty of Engineering, 2022-09-30)

  In this study, a 2-storey masonry building, which is considered to be in the campus area of Nevşehir Hacı Bektaş Veli University in Nevşehir, was designed according to strength, deformation and design-based analyses were ...
• Uçucu kül, cam tozu ve çimento esaslı hibrit geopolimer harçların mekanik özelliklerine yüksek sıcaklığın etkisi ve yaşam döngüsü analizi (YDA) 

  Baran, Bilal; Atabey, İsmail İsa; Çelikten, Serhat (Niğde Ömer Halisdemir Üniversitesi, 2023-07-15)

  Bu çalışmada, havada kür edilen uçucu kül (UK) ve atık cam tozu (CT) esaslı geopolimer harçlar ile Portland çimentosu (PÇ) içeren geleneksel ve hibrit (UK+PÇ, CT+PÇ, UK+CT+PÇ) geopolimer harçların mekanik özelliklerine ...
• Investigation of thermally evaporated high resistive B-doped amorphous selenium alloy films and metal contact studies 

  Oner, Cihan; Nguyen, Khai V.; Pak, Rahmi O.; Mohammad, A. Mannan; Mandal, Krishna C. (SPIE, 2015)

  Amorphous selenium (a-Se) alloy materials with arsenic, chlorine, boron, and lithium doping were synthesized for room temperature nuclear radiation detector applications using an optimized alloy composition for enhanced ...
• High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS) 

  Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mohammad, A. Mannan; Mandal, Krishna C. (SPIE, 2015)

  High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 ...
• Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer 

  Mohammad, A. Mannan; Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan (SPIE, 2015)

  Schottky barrier radiation detectors were fabricated on the Si-face of 50 μm thick detector grade n-type 4H-SiC epitaxial layers. The junction properties of the fabricated detectors were investigated by current-voltage ...
• Defect characterization of Cd0.9Zn0.1Te crystals using electron beam induced current (EBIC) imaging and thermally stimulated current (TSC) measurements 

  Pak, Rahmi O.; Nguyen, Khai V.; Oner, Cihan; Mohammad, A. Mannan; Mandal, Krishna C. (SPIE, 2015)

  Semi-insulating Cd0.9Zn0.1Te nuclear detector grade crystals were grown by a low temperature solution method from in-house zone refined (~7N) precursor materials. The processed crystals from the grown ingot were thoroughly ...
• Investigation of metal contacts on high-resistivity large-area amorphous selenium alloy films 

  Oner, Cihan; Nguyen, Khai V.; Pak, Rahmi O.; Chowdhury, Towhid A.; Mandal, Krishna C. (IEEE, 2015)

  Amorphous selenium (a-Se) alloy materials doped with lithium (Li), boron (B), arsenic (As), and chlorine (Cl), were synthesized for room temperature radiation detection applications using an optimized alloy composition for ...
• Investigation of 12 μm 4H-SiC epilayers for radiation detection and noise analysis of front-end readout electronics 

  Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Zhao, Feng; Mandal, Krishna C. (IEEE, 2015)

  Schottky barrier radiation detectors were fabricated on 12 μm n-type 4H-SiC epitaxial layers grown on a 4° off-axis highly doped 4H-SiC substrate (0001). Schottky barrier junction properties were characterized through ...
• Characterization of Cd0.9Zn0.1Te single crystals for radiation detectors 

  Pak, Rahmi O.; Nguyen, Khai V.; Oner, Cihan; Chowdhury, Towhid A.; Mandal, Krishna C. (IEEE, 2015)

  Large volume single crystals of Cd 0.9 Zn 0.1 Te (CZT) have been grown by vertical Bridgman technique using in-house zone refined precursor materials (Cd, Zn, and Te). The grown semi-insulating CZT crystals have shown high ...
• Deep levels in n-type 4H-silicon carbide epitaxial layers investigated by deep-level transient spectroscopy and isochronal annealing studies 

  Mohammad, A. Mannan; Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mandal, Krishna C. (IEEE, 2016)

  Deep levels were investigated by the capacitance mode deep-level transient spectroscopy (C-DLTS) on 4H-SiC Schottky barrier diodes fabricated on 50 μm-thick n-type 4HSiC epitaxial layers. C-DLTS scans from 80 K to 800 K ...
• Improved radiation detectors on 4H-SiC epilayers by edge termination 

  Oner, Cihan; Chowdhury, Towhid A.; Pak, Rahmi O.; Mandal, Krishna C. (SPIE, 2016)

  We report the development of an edge termination by depositing thin Si3N4 passivating film on 4H-SiC epilayer based radiation detector. The edge termination method is shown to be very effective for improving both the ...
• Synthesis and characterization of amorphous selenium alloys radiation detectors 

  Chowdhury, Towhid A.; Oner, Cihan; Mandal, Krishna C. (IEEE, 2017)

  Synthesized amorphous selenium (a-Se) alloy materials have been characterized for room temperature high-energy nuclear radiation detectors and x-ray detection applications. The alloy composition has been optimized to ensure ...
• Treatment of textile wastewater with cherry laurel leaves and waste potato peels 

  Yakut, Şennur Merve (Niğde Ömer Halisdemir Üniversitesi, 2023)

  In this study, a research was carried out on the removal of dyestuff, which is a big problem in the textile industry. The adsorption method was used for the removal of Maxilon Yellow 4GL dyestuff. Cherry laurel leaf (Prunus ...
• Deep level transient spectroscopy and pulse height measurements on high resolution n-type 4H-SiC epitaxial schottky barrier radiation detectors 

  Oner, Cihan; Chowdhury, Towhid A.; Santi, Enrico; Mandal, Krishna C. (IEEE, 2017)

  High resolution 20 μm n-type 4H-SiC epitaxial layer Schottky barrier radiation detectors were fabricated by depositing nickel (Ni) contacts using DC sputtering for both front- and backside. Current-Voltage (I-V) measurements ...

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