Large volume single crystals of Cd 0.9 Zn 0.1 Te (CZT) have been grown by vertical Bridgman technique using in-house zone refined precursor materials (Cd, Zn, and Te). The grown semi-insulating CZT crystals have shown high ...

High resolution 20 μm n-type 4H-SiC epitaxial layer Schottky barrier radiation detectors were fabricated by depositing nickel (Ni) contacts using DC sputtering for both front- and backside. Current-Voltage (I-V) measurements ...

Semi-insulating Cd0.9Zn0.1Te nuclear detector grade crystals were grown by a low temperature solution method from in-house zone refined (~7N) precursor materials. The processed crystals from the grown ingot were thoroughly ...

High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 ...

Schottky barrier radiation detectors were fabricated on 12 μm n-type 4H-SiC epitaxial layers grown on a 4° off-axis highly doped 4H-SiC substrate (0001). Schottky barrier junction properties were characterized through ...

Amorphous selenium (a-Se) alloy materials with arsenic, chlorine, boron, and lithium doping were synthesized for room temperature nuclear radiation detector applications using an optimized alloy composition for enhanced ...