Mandal, Krishna C.; Chowdhury, Towhid A.; Oner, Cihan; Ruddy, Frank H.
(ASTM INTERNATIONAL, 2018-12-14)
A high-sensitivity boron-diffused silicon carbide (4H-SiC) p-n diode has been designed and fabricated using vapor-phase epitaxy. Boron-10 (10B) is diffused into nitrogen-doped n- SiC, forming the p+ layer, and thermal ...