Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer

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dc.contributor.author Mohammad, A. Mannan
dc.contributor.author Nguyen, Khai V.
dc.contributor.author Pak, Rahmi O.
dc.contributor.author Oner, Cihan
dc.date.accessioned 2023-12-21T06:46:45Z
dc.date.available 2023-12-21T06:46:45Z
dc.date.issued 2015
dc.identifier.citation Mohammad A. Mannan, Khai V. Nguyen, Rahmi Pak, Cihan Oner, and Krishna C. Mandal "Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer", Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 95931H (4 September 2015); https://doi.org/10.1117/12.2196582 tr_TR
dc.identifier.uri http://hdl.handle.net/20.500.11787/8354
dc.description.abstract Schottky barrier radiation detectors were fabricated on the Si-face of 50 μm thick detector grade n-type 4H-SiC epitaxial layers. The junction properties of the fabricated detectors were investigated by current-voltage (I-V) and capacitancevoltage (C-V) measurements. The radiation detector performances were evaluated by alpha pulse height spectroscopy using a 0.1 μCi 241Am radiation source. Deep level transient spectroscopy (DLTS) measurements were carried out to identify and characterize the electrically active defect levels present in the epitaxial layers. The performance of the detector was found to be limited by the presence of electrically active defect centers in the epilayer. Deep level defects were reduced significantly by isochronal annealing. Surface passivation studies were conducted on n-type 4H-SiC epilayers for use on radiation detectors for the first time. Energy resolution of the detector was found to have improved after passivation and the life time killing defects that were responsible for preventing full charge collection were reduced significantly. Systematic and thorough C-DLTS studies were conducted prior and subsequent to isochronal annealing to observe evolution of the deep level defects. tr_TR
dc.language.iso eng tr_TR
dc.publisher SPIE tr_TR
dc.relation.isversionof 10.1117/12.2196582 tr_TR
dc.rights info:eu-repo/semantics/openAccess tr_TR
dc.subject Surface Passivation tr_TR
dc.subject Isochronal Annealing tr_TR
dc.subject SiC tr_TR
dc.subject Radiation Detectors tr_TR
dc.title Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer tr_TR
dc.type conferenceObject tr_TR
dc.relation.journal Proceedings Volume 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII tr_TR
dc.contributor.department Elektrik-Elektronik Mühendisliği Bölümü tr_TR
dc.contributor.authorID 298671 tr_TR
dc.contributor.authorID 0000-0003-4967-9598 tr_TR


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