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Deep level transient spectroscopy and pulse height measurements on high resolution n-type 4H-SiC epitaxial schottky barrier radiation detectors

Oner, Cihan; Chowdhury, Towhid A.; Santi, Enrico; Mandal, Krishna C. (IEEE, 2017)

High resolution 20 μm n-type 4H-SiC epitaxial layer Schottky barrier radiation detectors were fabricated by depositing nickel (Ni) contacts using DC sputtering for both front- and backside. Current-Voltage (I-V) measurements ...
Design and response testing of Boron-Diffused silicon carbide neutron detectors for Dosimetry and Monitoring applications

Mandal, Krishna C.; Chowdhury, Towhid A.; Oner, Cihan; Ruddy, Frank H. (ASTM INTERNATIONAL, 2018-12-14)

A high-sensitivity boron-diffused silicon carbide (4H-SiC) p-n diode has been designed and fabricated using vapor-phase epitaxy. Boron-10 (10B) is diffused into nitrogen-doped n- SiC, forming the p+ layer, and thermal ...